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Semiconductor characteristics of tellurium and its implementations

  • Aparna Das ORCID logo EMAIL logo and Bimal Krishna Banik EMAIL logo
Published/Copyright: May 18, 2022
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Abstract

Tellurium (Te) gained worldwide attention because of its excellent properties, distinctive chained structures, and potential usages. Bulk Te is a p-type elemental helical semiconductor at room temperature and it also having a very limited band gap. Te presents fascinating characteristics such as nonlinear optical response, photoconductivity, good thermoelectric and piezoelectric properties. These charming characteristics induce Te a possible nominee for applications in field-effect transistors, IR acousto-optic deflectors, solar cells, self-developing holographic recording devices, photoconductors, gas sensors, radiative cooling devices, and topological insulators. The developments in these areas are incorporated in great detail. This study opens up the possibility of designing novel devices and considering modern applications of Tellurium.


Corresponding authors: Aparna Das and Bimal Krishna Banik, Department of Mathematics and Natural Sciences, College of Sciences and Human Studies, Prince Mohammad Bin Fahd University, Al Khobar, 31952, Kingdom of Saudi Arabia, E-mail: (A. Das), , (B. K. Banik)

Acknowledgments

AD and BKB are grateful to Prince Mohammad Bin Fahd University for support.

  1. Author contributions: All the authors have accepted responsibility for the entire content of this submitted manuscript and approved submission.

  2. Research funding: None declared.

  3. Conflict of interest statement: The authors declare no conflicts of interest regarding this article.

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Received: 2021-11-19
Accepted: 2022-03-30
Published Online: 2022-05-18

© 2022 Walter de Gruyter GmbH, Berlin/Boston

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