High Temperature Silicon Carbide CMOS Integrated Circuits

David T. Clark; Ewan P. Ramsay; A.E. Murphy; Dave A. Smith; Robin. F. Thompson; R.A.R. Young; Jennifer D. Cormack; C. Zhu; S. Finney; John Fletcher

doi:10.4028/www.scientific.net/MSF.679-680.726

Paper Titles

High Voltage 4H-SiC BJTs with Deep Mesa Edge Termination
p.710

600V-30A 4H-SiC JBS and Si IGBT Hybrid Module
p.714

Lifetime Control of 4.5 kV SiCGT by High-Energy Electron Irradiation
p.718

Performance Tests of a 4,1x4,1mm² SiC LCVJFET for a DC/DC Boost Converter Application
p.722

High Temperature Silicon Carbide CMOS Integrated Circuits
p.726

300°C Silicon Carbide Integrated Circuits
p.730

4H-SiC N-MOSFET Logic Circuits for High Temperature Operation
p.734

Forced-Air-Cooled 10 kW Three-Phase SiC Inverter with Output Power Density of More than 20 kW/L
p.738

Thermal Management versus Full Isolation: Trade Off in Packaging Technologies of Modern SiC Diodes
p.742

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680High Temperature Silicon Carbide CMOS Integrated...

High Temperature Silicon Carbide CMOS Integrated Circuits

Abstract:

The wide band-gap of Silicon Carbide (SiC) makes it a material suitable for high temperature integrated circuits [1], potentially operating up to and beyond 450°C. This paper describes the development of a 15V SiC CMOS technology developed to operate at high temperatures, n and p-channel transistor and preliminary circuit performance over temperature achieved in this technology.

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Silicon Carbide and Related Materials 2010

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Periodical:

Materials Science Forum (Volumes 679-680)

Pages:

726-729

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.726

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Online since:

March 2011

Authors:

David T. Clark, Ewan P. Ramsay, A.E. Murphy, Dave A. Smith, Robin. F. Thompson, R.A.R. Young, Jennifer D. Cormack, C. Zhu, S. Finney, John Fletcher

Keywords:

4H-SiC, CMOS, High-Temperature, Integrated Circuit, Silicon Carbide (SiC)

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References

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