Skip to content

Commit c5981d2

Browse files
authored
Update README.md
1 parent e526fb1 commit c5981d2

File tree

1 file changed

+27
-0
lines changed

1 file changed

+27
-0
lines changed

README.md

+27
Original file line numberDiff line numberDiff line change
@@ -2,6 +2,33 @@
22
|---|
33
# EE6601 - Advanced Wafer Processing, Spring 2019
44

5+
### Learning Objective:
6+
7+
- To study deep sub-micron front end process technology.
8+
- To study deep sub-micron back end process technology.
9+
- To study characterization techniques relevant to deep sub-micron process technology.
10+
11+
### Comtent:
12+
13+
Dielectrics for CMOS technology. Chemical and mechanical polishing. Lithography and resist technology. Etching process and technology. Backend interconnect technology. Cleaning technology. Process integration. Metrology and analytical techniques.
14+
15+
### Learning Outcome:
16+
17+
The students will be exposed to state-of-the-art advanced CMOS process technologies. They will also be exposed to future technology. They will also become more familiar with the relevant diagnostic techniques for process related issues.
18+
19+
### Other Relative Information:
20+
21+
- Prior knowledge required: some basic knowledge of MOSFETs and CMOS technology.
22+
- Level of difficulty: medium.
23+
- Mathematics: simple.
24+
25+
### Textbooks:
26+
27+
- J. D. Plummer, M. D. Deal, and P. B. Griffin “Silicon VLSI Technology: Fundamentals, Practice, and Modeling,” <i>Prentice Hall</i>, 2001.
28+
- C. Y. Chang and S. M. Sze, “ULSI Technology,” <i>ISBN 9780071141055</i>, 1996.
29+
30+
### Lecture Notes:
31+
532
|#|Content|Lecture Note|Lecturer|
633
|:---:|:---:|:---:|:---:|
734
|**Part 1**|

0 commit comments

Comments
 (0)