CN102371254B - Cleaning system - Google Patents
Cleaning system Download PDFInfo
- Publication number
- CN102371254B CN102371254B CN 201010250914 CN201010250914A CN102371254B CN 102371254 B CN102371254 B CN 102371254B CN 201010250914 CN201010250914 CN 201010250914 CN 201010250914 A CN201010250914 A CN 201010250914A CN 102371254 B CN102371254 B CN 102371254B
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- Prior art keywords
- outlet
- deionized water
- inlet
- gas
- heat exchanger
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 31
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000008367 deionised water Substances 0.000 claims abstract description 42
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 42
- 238000002347 injection Methods 0.000 claims abstract description 24
- 239000007924 injection Substances 0.000 claims abstract description 24
- 239000012530 fluid Substances 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims abstract description 5
- 238000002156 mixing Methods 0.000 claims description 28
- 239000007788 liquid Substances 0.000 claims description 22
- 238000000746 purification Methods 0.000 claims description 11
- 238000001914 filtration Methods 0.000 claims description 7
- 238000000926 separation method Methods 0.000 claims description 7
- 239000002699 waste material Substances 0.000 claims description 3
- 238000011084 recovery Methods 0.000 claims 1
- 238000005507 spraying Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 15
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 15
- 239000000463 material Substances 0.000 abstract description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 36
- 239000001569 carbon dioxide Substances 0.000 description 18
- 229910002092 carbon dioxide Inorganic materials 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000010926 purge Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 241000009298 Trigla lyra Species 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002808 molecular sieve Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000009527 percussion Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
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- Cleaning Or Drying Semiconductors (AREA)
Abstract
本发明公开了一种清洗系统包括：去离子水储罐、CO2气瓶、用于对CO2加热并使其达到高温状态的控制装置、清洗腔室及用于将含去离子水和高温状态的CO2的混合流体喷射到清洗腔室的喷射装置；所述去离子水储罐的出口及所述CO2气瓶的出口与所述喷射装置的入口连接；所述喷射装置的出口与所述清洗腔室的入口连接。本发明公开了一种清洗方法包括：形成高温状态的CO2；形成含去离子水和所述高温CO2的混合流体；及使用所述混合流体对样片进行清洗处理。根据本发明的清洗系统及方法，可以将无机碳化厚层和底部有机光刻胶以及固化交联的SU-8全部剥离，去胶效率大大提高，无残留物，基底材料的损失最小化。
The invention discloses a cleaning system comprising: a deionized water storage tank, a CO2 gas cylinder, a control device for heating CO2 and making it reach a high temperature state, a cleaning chamber and a The mixed fluid of CO in the state is injected into the injection device of the cleaning chamber; the outlet of the deionized water storage tank and the outlet of the CO cylinder are connected with the inlet of the injection device; the outlet of the injection device is connected with the The inlet connection of the cleaning chamber. The invention discloses a cleaning method comprising: forming high-temperature CO 2 ; forming a mixed fluid containing deionized water and the high-temperature CO 2 ; and using the mixed fluid to clean a sample. According to the cleaning system and method of the present invention, the inorganic carbonized thick layer, bottom organic photoresist and cured cross-linked SU-8 can all be stripped, the deglue efficiency is greatly improved, there is no residue, and the loss of the base material is minimized.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly a kind of purging system and method.
Background technology
In modern cmos device, nearly all substrat structure all injects via ion and forms.Energetic ion can damage photoresist, it is become be difficult to remove.After injecting, these ions can exist with forms such as oxide layer, inferior oxide layer or organic compounds.These energetic ions also can make the photoresist surface become the carbon layer that a kind of diamond-type mixes with graphite mould.Therefore carbonization technique makes the removal of injecting photoresist become to have very much challenge.Remove for the injection photoresist on the silicon, can use alkalescence or acid fluorine-based solution to realize, but can cause the loss to bottom silicon; Also can use the removing of photoresist by plasma technology, but the electric charge that inhomogeneous plasma produces can damage the sensitive structure of crystal column surface.
Summary of the invention
One of purpose of the present invention provides a kind of being reduced in when print cleaned, and the print base material is caused purging system and the method for damage.
According to an aspect of the present invention, provide a kind of purging system to comprise:
Deionized water storage tank, CO
2Gas cylinder, be used for CO
2Heating also makes the control device of its state that reaches a high temperature, wash chamber reach the CO that is used for containing deionized water and the condition of high temperature
2Fluid-mixing be ejected into the injection apparatus of wash chamber; The outlet of described deionized water storage tank and described CO
2The outlet of gas cylinder is connected with the entrance of described injection apparatus; The outlet of described injection apparatus is connected with the entrance of described wash chamber.
According to an aspect of the present invention, provide a kind of cleaning method to comprise:
Form the CO of the condition of high temperature
2
Formation contains deionized water and described high temperature CO
2Fluid-mixing; And
Use described fluid-mixing that print is carried out cleaning treatment.
According to purging system of the present invention and method, the SU-8 of inorganic carbide thick-layer and bottom organic photoresist and curing cross-linked all can be peeled off, the efficient of removing photoresist improves greatly, noresidue, the minimization of loss of base material.
Description of drawings
Fig. 1 is the structural representation of the purging system that provides of the embodiment of the invention;
The object of the invention, function and advantage will be in conjunction with the embodiments, are described further with reference to accompanying drawing.
The specific embodiment
As shown in Figure 1, the purging system that provides of the embodiment of the invention comprises: the deionized water storage tank 7, the CO that are used for the storage deionized water
2Gas cylinder 18 (the CO that provides
2Gas purity reaches more than 99.999%), be used for CO
2Heating also makes the control device of its state that reaches a high temperature, wash chamber 13 reach the CO that is used for containing deionized water and the condition of high temperature
2Fluid-mixing be ejected into the injection apparatus 10 of wash chamber 13, for delivery of the auxiliary current-carrying device of the deionized water of deionized water and CO
2Retracting device.
Wherein, deionized water storage tank 7 is provided with pressure gauge 2.
Control device comprises heat exchanger 17 (be used for the heating carbon dioxide, make carbon dioxide reach 100～400 ℃), pressure-reducing valve 20, filter 4, valve 5 and pressure gauge 2.Wherein, CO
2The outlet of gas cylinder 18 is connected with the entrance of heat exchanger 17 by pressure gauge 2, pressure-reducing valve II 20, filter 4 successively.The outlet of heat exchanger 17 is connected with the entrance of accurate blender by valve 5, pressure gauge 2 successively.Heat exchanger 17 is provided with pressure gauge 2.
The auxiliary current-carrying device of deionized water comprises N
2Gas cylinder 1 (is used for providing the N that carries deionized water
2), pressure gauge 2, pressure-reducing valve I3, filter 4, valve 5 and flowmeter 9 (flow that is used for the control piper fluid).N
2The outlet of gas cylinder 1 is connected with the entrance of deionized water storage tank 7 by pressure gauge 2, pressure-reducing valve I3, filter 4, valve 5 successively, and the outlet of deionized water storage tank 7 is connected with the entrance of accurate blender by valve 5, flowmeter 9 successively.
Be provided with rotatable for the fixing pallet 12 of print 11 in the wash chamber 13.Pallet 12 is positioned under the nozzle.Nozzle comprises a swivel joint, and nozzle can carry out motion scan according to step motor type, and nozzle be changed detachably around 360 ° of rotations of axis of swivel joint.
CO
2Retracting device comprises that gas-liquid separator 28 is (for separating of deionized water and the CO of remnants
2Fluid-mixing), filter purification devices 24 (adopt drier powder, glass fibre, molecular sieve or polytetrafluoro etc., be used for carbon dioxide drying and purifying) and cold EGR 27 (being used for impelling gas-liquid separation).The entrance of gas-liquid separator 28 is connected with the outlet of wash chamber 13.The outlet of gas-liquid separator 28 is connected with the entrance that filters purification devices 24.The outlet of gas-liquid separator 28 is connected with the entrance of a waste liquid tank 25.The outlet of waste liquid tank 25 is connected with the entrance of a draining valve 26.The outlet of filtering purification devices 24 is connected with heat exchanger 17 by a check valve 23.The outlet of filtering purification devices 24 is connected with heat exchanger 17 by a valve 5.(effect mainly is to make water and carbon dioxide separation abundant to cold EGR 27; Its critical piece has compressor, blower fan, cold circulation pipe etc.) be connected with gas-liquid separator 28.
The embodiment of the invention also provides a kind of cleaning method, may further comprise the steps:
The CO of step S1, the formation condition of high temperature
2
Step S2, formation contain deionized water and described high temperature CO
2Fluid-mixing.And
Step S3, the described fluid-mixing of use carry out cleaning treatment to the print top layer.Wherein, the CO of the deionized water of cleaning treatment and high temperature
2CO in the fluid-mixing
2Temperature to reach be 100～400 ℃ (for example, 100 ℃, 200 ℃, 300 ℃, 350 ℃, 400 ℃); Deionized water and CO
2Ratio be 40～90% (for example, 40%, 50%, 60%, 70%, 80%, 90%).
Step S4, to carrying out CO contained in the cleaned fluid-mixing
2Reclaim.
Based on system shown in Figure 1 this cleaning method is elaborated with following concrete example.
Embodiment 1
This procedure is as follows: print 11 is put into pallet 12 and fixing, and whether pallet 12 is selected to rotate as required; By the temperature value of setting heat exchanger 17 heat exchanger 17 is heated, when temperature reaches temperature required, regulate pressure-reducing valve I3 and pressure-reducing valve II20, regulate flowmeter 9; This moment N
2Will be by valve 5, and through flowmeter 9 control flows, carry in the accurate blender in the deionized water inflow injection apparatus 10, carbon dioxide absorbs the high-temperature gas that heat forms 100 ℃ through over-heat-exchanger 17, then successively by in the accurate blender in valve 5, the pressure gauge 2 inflow injection apparatus 10; The CO of deionized water and high temperature
2By the control of accurate blender, mixing chamber's control and to mix the formation ratio be 40% fluid-mixing, then by nozzle with high velocity jet to the print 11 that is fixed on the pallet 12, print is carried out cleaning treatment; Nozzle can be around 360 ° of rotations of axis of swivel joint, can scan mobile the cleaning, and can dismounting and change; Product in the wash chamber 13 (mainly comprises carbon dioxide, the particles such as photoresist that water and being stripped from gets off) in gas-liquid separator 28, handle, promote the separation of gas-liquid by cold EGR 27, by the carbon dioxide after the separating treatment after filtration purification devices 24 carry out flowing back to again in the heat exchanger 17 behind drying and the purifying, realize that carbon dioxide recycles.
This procedure is as follows: print 11 is put into pallet 12 and fixing, and whether pallet 12 is selected to rotate as required; By the temperature value of setting heat exchanger 17 heat exchanger 17 is heated, when temperature reaches temperature required, regulate pressure-reducing valve I3 and pressure-reducing valve II20, regulate flowmeter 9; This moment N
2Will be by valve 5, and through flowmeter 9 control flows, carry in the accurate blender in the deionized water inflow injection apparatus 10, carbon dioxide absorbs the high-temperature gas that heat forms 150 ℃ through over-heat-exchanger 17, then successively by in the accurate blender in valve 5, the pressure gauge 2 inflow injection apparatus 10; The CO of deionized water and high temperature
2By the control of accurate blender, mixing chamber's control and to mix the formation ratio be 50% fluid-mixing, then by nozzle with high velocity jet to the print 11 that is fixed on the pallet 12, print is carried out cleaning treatment; Nozzle can be around 360 ° of rotations of axis of swivel joint, can scan mobile the cleaning, and can dismounting and change; Product in the wash chamber 13 is handled in gas-liquid separator 28, promote the separation of gas-liquid by cold EGR 27, by the carbon dioxide after the separating treatment after filtration purification devices 24 carry out flowing back to again in the heat exchanger 17 behind drying and the purifying, realize that carbon dioxide recycles.
Embodiment 3
This procedure is as follows: print 11 is put into pallet 12 and fixing, and whether pallet 12 is selected to rotate as required; By the temperature value of setting heat exchanger 17 heat exchanger 17 is heated, when temperature reaches temperature required, regulate pressure-reducing valve I3 and pressure-reducing valve II20, regulate flowmeter 9; This moment N
2Will be by valve 5, and through flowmeter 9 control flows, carry in the accurate blender in the deionized water inflow injection apparatus 10, carbon dioxide absorbs the high-temperature gas that heat forms 200 ℃ through over-heat-exchanger 17, then successively by in the accurate blender in valve 5, the pressure gauge 2 inflow injection apparatus 10; The CO of deionized water and high temperature
2By the control of accurate blender, mixing chamber's control and to mix the formation ratio be 60% fluid-mixing, then by nozzle with high velocity jet to the print 11 that is fixed on the pallet 12, print is carried out cleaning treatment; Nozzle can be around 360 ° of rotations of axis of swivel joint, can scan mobile the cleaning, and can dismounting and change; Product in the wash chamber 13 is handled in gas-liquid separator 28, promote the separation of gas-liquid by cold EGR 27, by the carbon dioxide after the separating treatment after filtration purification devices 24 carry out flowing back to again in the heat exchanger 17 behind drying and the purifying, realize that carbon dioxide recycles.
Embodiment 4
This procedure is as follows: print 11 is put into pallet 12 and fixing, and whether pallet 12 is selected to rotate as required; By the temperature value of setting heat exchanger 17 heat exchanger 17 is heated, when temperature reaches temperature required, regulate pressure-reducing valve I3 and pressure-reducing valve II20, regulate flowmeter 9; This moment N
2Will be by valve 5, and through flowmeter 9 control flows, carry in the accurate blender in the deionized water inflow injection apparatus 10, carbon dioxide absorbs the high-temperature gas that heat forms 400 ℃ through over-heat-exchanger 17, then successively by in the accurate blender in valve 5, the pressure gauge 2 inflow injection apparatus 10; The CO of deionized water and high temperature
2By the control of accurate blender, mixing chamber's control and to mix the formation ratio be 90% fluid-mixing, then by nozzle with high velocity jet to the print 11 that is fixed on the pallet 12, print is carried out cleaning treatment; Nozzle can be around 360 ° of rotations of axis of swivel joint, can scan mobile the cleaning, and can dismounting and change; Product in the wash chamber 13 is handled in gas-liquid separator 28, promote the separation of gas-liquid by cold EGR 27, by the carbon dioxide after the separating treatment after filtration purification devices 24 carry out flowing back to again in the heat exchanger 17 behind drying and the purifying, realize that carbon dioxide recycles.
The cleaning method that the embodiment of the invention provides and system thereof, utilize the high-speed jet percussion of the superior diffusivity of carbon dioxide, low viscosity and permeability and fluid-mixing, the SU-8 of inorganic carbide thick-layer and bottom organic photoresist and curing cross-linked all can be peeled off, the efficient of removing photoresist improves greatly, noresidue, the minimization of loss of base material; The omission cineration step can reduce the damage to substrate greatly; This process does not have the formation of oxide layer, and mean square deviation roughness and silicon loss are lower; Especially little injection photoresist figure also there is the effect of well removing photoresist.Photoresist after effective and rapid removal high dose injection and the curing will provide prospective technology and scheme for the technology of removing photoresist of 22nm, and also help to promote the extensive use of SU-8 glue in the MEMS technology.
Above-described embodiment is preferred implementation of the present invention; but embodiments of the present invention are not restricted to the described embodiments; other any do not deviate from change, the modification done under spiritual essence of the present invention and the principle, substitutes, combination, simplify; all should be the substitute mode of equivalence, be included within protection scope of the present invention.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010250914 CN102371254B (en) | 2010-08-11 | 2010-08-11 | Cleaning system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010250914 CN102371254B (en) | 2010-08-11 | 2010-08-11 | Cleaning system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102371254A CN102371254A (en) | 2012-03-14 |
| CN102371254B true CN102371254B (en) | 2013-08-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010250914 Expired - Fee Related CN102371254B (en) | 2010-08-11 | 2010-08-11 | Cleaning system |
Country Status (1)
| Country | Link |
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| CN (1) | CN102371254B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102641823B (en) * | 2012-05-14 | 2015-10-28 | 中国科学院微电子研究所 | Microwave glue homogenizing device and glue homogenizing method |
| CN115077207B (en) * | 2022-06-20 | 2024-07-12 | 合肥维信诺科技有限公司 | Cleaning and drying system and cleaning and drying method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020048731A1 (en) * | 1997-05-27 | 2002-04-25 | William H Mullee | Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process |
| WO2004008249A2 (en) * | 2002-07-17 | 2004-01-22 | Scp Global Technologies, Inc. | Compositions and method for removing photoresist and/or resist residue |
| CN1494733A (en) * | 2001-12-03 | 2004-05-05 | ��ʽ�������Ƹ��� | High-pressure treatment method |
| CN1628000A (en) * | 2001-02-15 | 2005-06-15 | 米歇尔技术公司 | Methods for cleaning microelectronic structures |
| EP1844850A1 (en) * | 2006-04-13 | 2007-10-17 | Air Products and Chemicals, Inc. | Cleaning of contaminated articles by aqueous supercritical oxidation |
| CN101740342A (en) * | 2008-11-26 | 2010-06-16 | 中国科学院微电子研究所 | Green carbon dioxide supercritical fluid semiconductor cleaning equipment |
-
2010
- 2010-08-11 CN CN 201010250914 patent/CN102371254B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020048731A1 (en) * | 1997-05-27 | 2002-04-25 | William H Mullee | Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process |
| CN1628000A (en) * | 2001-02-15 | 2005-06-15 | 米歇尔技术公司 | Methods for cleaning microelectronic structures |
| CN1494733A (en) * | 2001-12-03 | 2004-05-05 | ��ʽ�������Ƹ��� | High-pressure treatment method |
| WO2004008249A2 (en) * | 2002-07-17 | 2004-01-22 | Scp Global Technologies, Inc. | Compositions and method for removing photoresist and/or resist residue |
| EP1844850A1 (en) * | 2006-04-13 | 2007-10-17 | Air Products and Chemicals, Inc. | Cleaning of contaminated articles by aqueous supercritical oxidation |
| CN101740342A (en) * | 2008-11-26 | 2010-06-16 | 中国科学院微电子研究所 | Green carbon dioxide supercritical fluid semiconductor cleaning equipment |
Non-Patent Citations (2)
| Title |
|---|
| 刘建慧等.超临界二氧化碳在微电子技术中的应用.《应用化工》.2008,(第03期), |
| 超临界二氧化碳在微电子技术中的应用;刘建慧等;《应用化工》;20080328(第03期);全文 * |
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