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. 2024 Jan 16;18(2):1477-1484.
doi: 10.1021/acsnano.3c07980. Epub 2024 Jan 2.

High-Performance Multiwavelength GaNAs Single Nanowire Lasers

Mattias Jansson  1 , Valentyna V Nosenko  1 , Yuto Torigoe  2 , Kaito Nakama  3 , Mitsuki Yukimune  2 , Akio Higo  4 , Fumitaro Ishikawa  3 , Weimin M Chen  1 , Irina A Buyanova  1
Affiliations

High-Performance Multiwavelength GaNAs Single Nanowire Lasers

Mattias Jansson et al. ACS Nano. .

Abstract

In this study, we report a significant enhancement in the performance of GaNAs-based single nanowire lasers through optimization of growth conditions, leading to a lower lasing threshold and higher operation temperatures. Our analysis reveals that these improvements in the laser performance can be attributed to a decrease in the density of localized states within the material. Furthermore, we demonstrate that owing to their excellent nonlinear optical properties, these nanowires support self-frequency conversion of the stimulated emission through second harmonic generation (SHG) and sum-frequency generation (SFG), providing coherent light emission in the cyan-green range. Mode-specific differences in the self-conversion efficiency are revealed and explained by differences in the light extraction efficiency of the converted light caused by the electric field distribution of the fundamental modes. Our work, therefore, facilitates the design and development of multiwavelength coherent light generation and higher-temperature operation of GaNAs nanowire lasers, which will be useful in the fields of optical communications, sensing, and nanophotonics.

Keywords: coherent light; lasing; multiwavelength coherent light; nanophotonics; nanowires; nonlinear optics; second harmonic generation (SHG).

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Conflict of interest statement

The authors declare no competing financial interest.

Figures

Figure 1
Figure 1
(a–d) Top-view SEM images of as-grown standing SAE-grown (a) and reference (b) NWs, and their corresponding lying NWs transferred to gold substrates (c, d, respectively). (e, g) TEM images of the SAE-grown (e) and reference (g) NWs. (f, h) IPF maps resolving the phase of ZB and WZ segments (denoted as the red and green segments in the upper images) and the orientation of ZB segments (the blue and red segments in the lower images) of a SAE-grown (e) and reference (h) NW. The color switch observed for the IPF map corresponds to the existence of twin defects. The scale bars in (a–b) and (c–h) are 300 nm and 1 μm, respectively.
Figure 2
Figure 2
(a, b) Power-dependent PL spectra acquired at 5 K from an SAE-grown (a) and reference (b) NW of lengths of 8.0 and 6.6 μm, respectively, using pulsed excitation at 800 nm. The insets show cross-sectional BF-STEM micrographs of representative NWs from the two structures. (c) Measured PL intensity of the lasing modes in the SAE-grown (the purple squares) and reference (the orange circles) NW, and simulated photon density using the rate equation analysis described in Supporting Information, section 8. (d) Box-plot showing the lasing threshold power measured from 50 NWs, where the box represents the 25 and 75 percentiles. (e) The yield: percentage of the investigated NWs which exhibit lasing. (f) Temperature dependence of the lasing threshold of an SAE-grown (the purple squares) and reference (the orange circles) NW. The dotted lines represent the best fit to the experimental data using the equation Pth ∝ eT/T0, where Pth is the lasing threshold power, and T0 is the characteristic temperature, which is deduced to be 160 K for both samples.
Figure 3
Figure 3
(a) The measured threshold power, Pth, vs the localization energy, E0, deduced from the PL spectra of SAE-grown (the purple squares) and reference (the orange circles) NWs, respectively. The measurements were performed at 5 K. (b) Simulated photon density, S, as a function of excitation power density, using the rate equations described in section 7 of the Supporting Information, with β = 0.05 and varying the density of localized states, DLS between 1017 (the dark purple line) and 1019 (the bright orange line) cm–3.
Figure 4
Figure 4
(a) PL spectra acquired from a SAE-grown NW under lasing conditions at different temperatures, showing emissions in both the NIR and visible spectral ranges. The visible range spectra have been normalized to those in the NIR range using the scaling factors displayed in the figure. (b) Magnification of the 6 K spectra from (a). (c, d) The intensity of the SHG and SFG peaks as a function of the corresponding fundamental lasing peak intensity (c) or the product of the two corresponding fundamental lasing peak intensities (d). The solid lines illustrate quadratic (c) and linear (d) dependence.
Figure 5
Figure 5
(a–c) Simulated |E|2 field distribution for the HE11a, HE11b, and HE21b modes, respectively. (d–f) Measured polar plots of the fundamental modes (the purple circles), the SFG (the yellow squares), and SHG (the green triangles) emission from three different NWs. The solid lines represent the simulated intensity distributions of the fundamental modes (HE11a, HE11b, and HE21b respectively) deduced from the FDTD calculations, whereas the dotted lines show the expected polarization pattern of the corresponding upconverted SHG and SFG signals. (g) The intensity ratio of the upconverted (SHG + SFG) and fundamental lasing light measured from different NWs exhibiting the HE11a, HE11b, and HE21b mode lasing (the symbols). The data were normalized to the mean value of the HE11b mode intensity. The stars show the expected ratios for the three different modes, taking into account eq 1, while the crosses show the calculated ratios using eq 1 combined with FDTD simulations of the light extraction efficiency. The solid lines are guides for the eye for the simulated values.
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